Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2763T1A-E1-AY UPA2763T1A-E1-AY

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102452-UPA2763T1A-E 1-AY Drain to Source Voltage (Vdss): 100 V Input Capacitance: 2.1 nF Number of Pins: 8 Rise Time: 13 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 1.5 W Turn-On Delay Time: 28 ns Continuous Drain Current (ID): 42 A Turn-Off Delay Time: 73 ns Drain to Source Resistance: 23 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 23 mΩ
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Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102452-UPA2763T1A-E 1-AY Drain to Source Voltage (Vdss): 100 V Input Capacitance: 2.1 nF Number of Pins: 8 Rise Time: 13 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 1.5 W Turn-On Delay Time: 28 ns Continuous Drain Current (ID): 42 A Turn-Off Delay Time: 73 ns Drain to Source Resistance: 23 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 23 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2763T1A-E1-AY - 1102452-UPA2763T1A-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2763T1A-E1-AY
1102452-UPA2763T1A-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2763T1A-E1-AY 1102452-UPA2763T1A-E1-AY
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102452-UPA2763T1A-E 1-AY Drain to Source Voltage (Vdss): 100 V Input Capacitance: 2.1 nF Number of Pins: 8 Rise Time: 13 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 1.5 W Turn-On Delay Time: 28 ns Continuous Drain Current (ID): 42 A Turn-Off Delay Time: 73 ns Drain to Source Resistance: 23 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 23 mΩ

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1102452-UPA2763T1A-E1-AY
Drain to Source Voltage (Vdss): 100 V
Input Capacitance: 2.1 nF
Number of Pins: 8
Rise Time: 13 ns
Fall Time: 11 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Max Power Dissipation: 1.5 W
Turn-On Delay Time: 28 ns
Continuous Drain Current (ID): 42 A
Turn-Off Delay Time: 73 ns
Drain to Source Resistance: 23 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 23 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102452-UPA2763T1A-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2763T1A-E1-AY
rDS(on) 0.0230 ohms
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