Renesas Electronics Corporation FETs - Single - UPA2739T1A-E2-AY UPA2739T1A-E2-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1277502-UPA2739T1A-E 2-AY Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-HVSON (5.4x5.15) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.renesas.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 1.5W Alternative Parts (Cross-Reference): SI7135DP-T1-GE3; IRFH9310TR2PBF; RS1E220ATTB1; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 85A Rds On (Maximum) at Id, Vgs: 5.7mOhm at 23A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6050pF at 10V
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1277502-UPA2739T1A-E 2-AY Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-HVSON (5.4x5.15) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.renesas.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 1.5W Alternative Parts (Cross-Reference): SI7135DP-T1-GE3; IRFH9310TR2PBF; RS1E220ATTB1; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 85A Rds On (Maximum) at Id, Vgs: 5.7mOhm at 23A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6050pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - UPA2739T1A-E2-AY - 1277502-UPA2739T1A-E2-AY - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - UPA2739T1A-E2-AY
1277502-UPA2739T1A-E2-AY
FETs - Single - UPA2739T1A-E2-AY 1277502-UPA2739T1A-E2-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1277502-UPA2739T1A-E 2-AY Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-HVSON (5.4x5.15) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.renesas.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 1.5W Alternative Parts (Cross-Reference): SI7135DP-T1-GE3; IRFH9310TR2PBF; RS1E220ATTB1; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 85A Rds On (Maximum) at Id, Vgs: 5.7mOhm at 23A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6050pF at 10V

Manufacturer: Renesas Electronics America
Win Source Part Number: 1277502-UPA2739T1A-E2-AY
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-HVSON (5.4x5.15)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.renesas.com
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 1.5W
Alternative Parts (Cross-Reference): SI7135DP-T1-GE3; IRFH9310TR2PBF; RS1E220ATTB1;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 85A
Rds On (Maximum) at Id, Vgs: 5.7mOhm at 23A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 6050pF at 10V

Buy Now
30V 85A MOSFET Transistor - 278-UPA2739T1A-E2-AY - ERSAELECTRONICS PTE. LTD.
Singapore
30V 85A MOSFET Transistor
278-UPA2739T1A-E2-AY
30V 85A MOSFET Transistor 278-UPA2739T1A-E2-AY
MOSFET P-CH 30V 85A 8HVSON Product overview: UPA2739T1A-E2-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2739T1A-E2-AY can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 85A 8HVSON Product overview: UPA2739T1A-E2-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2739T1A-E2-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2739T1A-E2-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2739T1A-E2-AY
MOSFET P-CH 30V 85A 8HVSON

MOSFET P-CH 30V 85A 8HVSON

Supplier's Site
MOSFET P-CH 30V 85A 8-SON - 668-UPA2739T1A-E2-AY - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 85A 8-SON
668-UPA2739T1A-E2-AY
MOSFET P-CH 30V 85A 8-SON 668-UPA2739T1A-E2-AY
MOSFET P-CH 30V 85A 8-SON

MOSFET P-CH 30V 85A 8-SON

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277502-UPA2739T1A-E2-AY 278-UPA2739T1A-E2-AY UPA2739T1A-E2-AY 668-UPA2739T1A-E2-AY
Product Name FETs - Single - UPA2739T1A-E2-AY 30V 85A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 30V 85A 8-SON
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Package Type SOT3 Tape & Reel (TR) 6050 pF @ 10 V
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