Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2738GR-E1-AT UPA2738GR-E1-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116518-UPA2738GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-PowerSOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1450pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116518-UPA2738GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-PowerSOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1450pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2738GR-E1-AT - 1116518-UPA2738GR-E1-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2738GR-E1-AT
1116518-UPA2738GR-E1-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2738GR-E1-AT 1116518-UPA2738GR-E1-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 1116518-UPA2738GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-PowerSOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1450pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116518-UPA2738GR-E1-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-PowerSOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1450pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
30V 10A MOSFET Transistor - 278-UPA2738GR-E1-AT - ERSAELECTRONICS PTE. LTD.
Singapore
30V 10A MOSFET Transistor
278-UPA2738GR-E1-AT
30V 10A MOSFET Transistor 278-UPA2738GR-E1-AT
MOSFET P-CH 30V 10A 8SOP Product overview: UPA2738GR-E1-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2738GR-E1-AT can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 10A 8SOP Product overview: UPA2738GR-E1-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2738GR-E1-AT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2738GR-E1-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2738GR-E1-AT
MOSFET P-CH 30V 10A 8SOP

MOSFET P-CH 30V 10A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1116518-UPA2738GR-E1-AT 278-UPA2738GR-E1-AT UPA2738GR-E1-AT UPA2738GR-E1-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2738GR-E1-AT 30V 10A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 1100 milliwatts 1100 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
Specs
Package Type Surface Mount
Packing Method Tube; Tube
View Details
GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details