Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2737GR-E1-AT UPA2737GR-E1-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116517-UPA2737GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1750pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Application Field: Used in Computers & Computer Peripherals, Power Management
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116517-UPA2737GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1750pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Application Field: Used in Computers & Computer Peripherals, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2737GR-E1-AT - 1116517-UPA2737GR-E1-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2737GR-E1-AT
1116517-UPA2737GR-E1-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2737GR-E1-AT 1116517-UPA2737GR-E1-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 1116517-UPA2737GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1750pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Application Field: Used in Computers & Computer Peripherals, Power Management

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116517-UPA2737GR-E1-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1750pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E2-AT; STS10P3LLH6;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Computers & Computer Peripherals, Power Management

Buy Now Datasheet
Singapore
30V 11A MOSFET Transistor
278-UPA2737GR-E1-AT
30V 11A MOSFET Transistor 278-UPA2737GR-E1-AT
MOSFET P-CH 30V 11A 8SOP Product overview: UPA2737GR-E1-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2737GR-E1-AT can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 11A 8SOP Product overview: UPA2737GR-E1-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2737GR-E1-AT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - UPA2737GR-E1-AT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
UPA2737GR-E1-AT-ND
Single FETs, MOSFETs UPA2737GR-E1-AT-ND
P-Channel 30V 11A (Ta) 1.1W (Ta) Surface Mount 8-SOP

P-Channel 30V 11A (Ta) 1.1W (Ta) Surface Mount 8-SOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UPA2737GR-E1-AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2737GR-E1-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2737GR-E1-AT
MOSFET P-CH 30V 11A 8SOP

MOSFET P-CH 30V 11A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1116517-UPA2737GR-E1-AT 278-UPA2737GR-E1-AT UPA2737GR-E1-AT-ND UPA2737GR-E1-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2737GR-E1-AT 30V 11A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 1100 milliwatts 1100 milliwatts
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