Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single UPA2720GR-E1-A

Description
Win Source Part Number: 1102440-UPA2720GR-E1 -A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V ECCN: EAR99 Fake Threat In the Open Market: 51 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 2156-UPA2720GR-E1-A- RETR,RENRNSUPA2720GR -E1-A Product Status: Obsolete
Request a Quote
Description
Win Source Part Number: 1102440-UPA2720GR-E1 -A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V ECCN: EAR99 Fake Threat In the Open Market: 51 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 2156-UPA2720GR-E1-A- RETR,RENRNSUPA2720GR -E1-A Product Status: Obsolete
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The UPA2720GR-E1-A is an N-channel power MOSFET in a Power SOP8 package, designed for power management in notebook computers and Li-ion battery protection circuits. It has a drain-to-source voltage rating of 30 V, a continuous drain current of ±14 A, and a maximum on-state resistance of 6.6 mΩ at VGS = 10 V and ID = 7 A. The device features a built-in gate protection diode and low input capacitance of 2800 pF typ. at VDS = 10 V. The package measures 6.0 mm × 4.4 mm with a 1.27 mm pitch and is a surface-mount type. It meets RoHS standards and is classified as "Standard" quality grade for general electronics applications.

Datasheet Summary
Powered by GS/AI

The UPA2720GR-E1-A is an N-channel power MOSFET in a Power SOP8 package, designed for power management in notebook computers and Li-ion battery protection circuits. It has a drain-to-source voltage rating of 30 V, a continuous drain current of ±14 A, and a maximum on-state resistance of 6.6 mΩ at VGS = 10 V and ID = 7 A. The device features a built-in gate protection diode and low input capacitance of 2800 pF typ. at VDS = 10 V. The package measures 6.0 mm × 4.4 mm with a 1.27 mm pitch and is a surface-mount type. It meets RoHS standards and is classified as "Standard" quality grade for general electronics applications.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1102440-UPA2720GR-E1-A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1102440-UPA2720GR-E1-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1102440-UPA2720GR-E1-A
Win Source Part Number: 1102440-UPA2720GR-E1 -A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V ECCN: EAR99 Fake Threat In the Open Market: 51 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 2156-UPA2720GR-E1-A- RETR,RENRNSUPA2720GR -E1-A Product Status: Obsolete

Win Source Part Number: 1102440-UPA2720GR-E1-A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-UPA2720GR-E1-A-RETR,RENRNSUPA2720GR-E1-A
Product Status: Obsolete

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102440-UPA2720GR-E1-A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 2060090 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
Transistor Technology / Material Si
MOSFET Operating Mode Enhancement
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810026SCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
4 suppliers
 - LM5106MM/NOPB - Rochester Electronics
Texas Instruments
Specs
Package Type VSSOP10
Packing Method Tape Reel; Tape & Reel
View Details