Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single UPA2706GR-E2-AT

Win Source Part Number: 1102438-UPA2706GR-E2-AT
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 15W (Tc)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.21.0095
Mfr: Renesas
Other Names: 2156-UPA2706GR-E2-AT
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
RoHS Status: RoHS non-compliant

UPA2706GR-E2-AT - MOS FIELD EFFE Product overview: UPA2706GR-E2-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2706GR-E2-AT can be used for catalog matching and distributor lookup.

MOS FIELD EFFECT TRANSISTOR