Renesas Electronics Corporation FETs - Arrays - UPA2352T1P-E4-A UPA2352T1P-E4-A

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 389337-UPA2352T1P-E4 -A Mounting Style: SMD FET Feature: Logic Level Gate, 2.5V Drive Transistor Polarity: 2 N-Channel (Dual) Common Drain Categories: Discrete Semiconductor Products Supplier Device Package: 4-EFLIP-LGA (1.4x1.4) Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Package: 4-XFLGA Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Maximum Power: 750mW Vds - Drain-Source Breakdown Voltage: 24V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 43mOhm at 2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 5.7nC at 4V Input Capacitance (Ciss) (Maximum) at Vds: 330pF at 10V
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 389337-UPA2352T1P-E4 -A Mounting Style: SMD FET Feature: Logic Level Gate, 2.5V Drive Transistor Polarity: 2 N-Channel (Dual) Common Drain Categories: Discrete Semiconductor Products Supplier Device Package: 4-EFLIP-LGA (1.4x1.4) Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Package: 4-XFLGA Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Maximum Power: 750mW Vds - Drain-Source Breakdown Voltage: 24V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 43mOhm at 2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 5.7nC at 4V Input Capacitance (Ciss) (Maximum) at Vds: 330pF at 10V
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FETs - Arrays - UPA2352T1P-E4-A - 389337-UPA2352T1P-E4-A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - UPA2352T1P-E4-A
389337-UPA2352T1P-E4-A
FETs - Arrays - UPA2352T1P-E4-A 389337-UPA2352T1P-E4-A
Manufacturer: Renesas Electronics America Win Source Part Number: 389337-UPA2352T1P-E4 -A Mounting Style: SMD FET Feature: Logic Level Gate, 2.5V Drive Transistor Polarity: 2 N-Channel (Dual) Common Drain Categories: Discrete Semiconductor Products Supplier Device Package: 4-EFLIP-LGA (1.4x1.4) Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Package: 4-XFLGA Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Maximum Power: 750mW Vds - Drain-Source Breakdown Voltage: 24V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 43mOhm at 2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 5.7nC at 4V Input Capacitance (Ciss) (Maximum) at Vds: 330pF at 10V

Manufacturer: Renesas Electronics America
Win Source Part Number: 389337-UPA2352T1P-E4-A
Mounting Style: SMD
FET Feature: Logic Level Gate, 2.5V Drive
Transistor Polarity: 2 N-Channel (Dual) Common Drain
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-EFLIP-LGA (1.4x1.4)
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: 4-XFLGA
Popularity: Low
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Maximum Power: 750mW
Vds - Drain-Source Breakdown Voltage: 24V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 43mOhm at 2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 5.7nC at 4V
Input Capacitance (Ciss) (Maximum) at Vds: 330pF at 10V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 389337-UPA2352T1P-E4-A
Product Name FETs - Arrays - UPA2352T1P-E4-A
Polarity N-Channel; 2 N-Channel (Dual) Common Drain
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