Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2 UPA1764G-E2

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 052950-UPA1764G-E2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 052950-UPA1764G-E2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2 - 052950-UPA1764G-E2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2
052950-UPA1764G-E2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2 052950-UPA1764G-E2
Manufacturer: Renesas Electronics America Win Source Part Number: 052950-UPA1764G-E2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 052950-UPA1764G-E2
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1300pF @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 052950-UPA1764G-E2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2
Polarity N-Channel
V(BR)DSS 60 volts
PD 2000 milliwatts
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