Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2-AZ UPA1764G-E2-AZ

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116512-UPA1764G-E2- AZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116512-UPA1764G-E2- AZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2-AZ - 1116512-UPA1764G-E2-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2-AZ
1116512-UPA1764G-E2-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2-AZ 1116512-UPA1764G-E2-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 1116512-UPA1764G-E2- AZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116512-UPA1764G-E2-AZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1300pF @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - UPA1764G-E2-AZ-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
UPA1764G-E2-AZ-ND
FET, MOSFET Arrays UPA1764G-E2-AZ-ND
Mosfet Array 2 N-Channel (Dual) 60V 7A 2W Surface Mount 8-SOP

Mosfet Array 2 N-Channel (Dual) 60V 7A 2W Surface Mount 8-SOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UPA1764G-E2-AZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA1764G-E2-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA1764G-E2-AZ
MOSFET 2N-CH 60V 7A 8SOP

MOSFET 2N-CH 60V 7A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1116512-UPA1764G-E2-AZ UPA1764G-E2-AZ-ND UPA1764G-E2-AZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA1764G-E2-AZ FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 60 volts
PD 2000 milliwatts
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