Renesas Electronics Corporation Single FETs, MOSFETs TPH3208LSG

The TPH3208LSG is a 650V normally-off GaN FET in an 8 x 8mm PQFN package, designed for high-efficiency switching applications such as AC-DC power factor correction, PV inverters, and servo motors. It features a maximum drain-source on-resistance of 130 mΩ at 13A and 25°C, a total gate charge of 10 nC, and a reverse recovery charge of 54 nC. The device supports a continuous drain current of 20 A at 25°C and 13 A at 100°C, with a transient drain-source voltage rating of 800 V. It has a junction-to-case thermal resistance of 1.3 °C/W and operates from -55°C to 150°C. The part complies with JEDEC qualification standards and is RoHS compliant and halogen-free.