Renesas Electronics Corporation Single FETs, MOSFETs TPH3208LDG

The TPH3208LDG is a 650V normally-off GaN FET in an 8 x 8mm PQFN package, designed for high-efficiency switching applications such as AC-DC power factor correction, datacom, PV inverters, and servo motors. It has a maximum dynamic on-resistance of 130mΩ, a typical gate charge of 10nC, and a reverse recovery charge of 54nC. The device is rated for continuous drain current up to 20A at 25°C and 13A at 100°C, with a peak pulsed current of 80A. Thermal resistance is 1.3°C/W junction-to-case and 45°C/W junction-to-ambient on a specified PCB. It is JEDEC qualified, RoHS compliant, and halogen-free, with a gate-source voltage rating of ±18V and operating junction temperature from -55°C to 150°C.