Renesas Electronics Corporation Single FETs, MOSFETs TPH3206LSB

The TPH3206LSB is a 650V normally-off Gallium Nitride (GaN) FET in an 8x8 PQFN package, designed for high-efficiency switching applications such as PFC, inverters, and motor drives. It has a maximum dynamic on-resistance of 180 mΩ at 10A and 25°C, a total gate charge of 6.2 nC, and a reverse recovery charge of 52 nC. The device supports a continuous drain current of 16 A at 25°C and 10 A at 100°C, with a maximum power dissipation of 81 W. Thermal resistance from junction to case is 1.55 °C/W, and junction-to-ambient is 45 °C/W on a standard PCB. It is RoHS compliant, halogen-free, and JEDEC qualified. Operating junction and case temperatures range from -55°C to 150°C.