The TPH3205WSB is a 600V, normally-off cascode GaN FET in a 3-lead TO-247 package with an exposed source tab, designed for high-efficiency power conversion. It has a maximum drain-source voltage of 600V, a drain-source on-resistance of 63mΩ at 25°C, a total gate charge of 28nC, and a reverse recovery charge of 136nC. It supports a continuous drain current of 36A at 25°C and operates with a junction temperature range of -55°C to 175°C. The device is RoHS compliant, halogen-free, and JEDEC-qualified, eliminating the need for a free-wheeling diode. Thermal resistance from junction to case is 1°C/W.
N-Channel 650V 36A (Tc) 125W (Tc) Through Hole TO-247-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | TPH3205WSB-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
