Renesas Electronics Corporation Single FETs, MOSFETs TP65H030G4PWS

The TP65H030G4PWS is a 650V normally-off GaN FET in a TO-247-3 package with a source tab, designed for high-efficiency power conversion in applications such as AI datacenters, e-mobility charging, and UPS systems. It has a maximum drain-source voltage of 650V, a dynamic on-resistance of 37mΩ maximum at 25°C, and a gate threshold voltage of 4V typical. The device features negligible reverse recovery charge, compatibility with standard silicon drivers, and a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.65°C/W. It is RoHS compliant and halogen-free, and meets JEDEC qualification standards.