Renesas Electronics Corporation TBB1016RMTL-E

Description
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
  • TBB1016RMTL-E - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- TBB1016RMTL-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
TBB1016RMTL-E
TBB1016RMTL-E
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Diodes
Product Number TBB1016RMTL-E
Life Cycle Stage Obsolete
Unlock Full Specs
to access all available technical data