Renesas Electronics Corporation TBB1005EMTL-E

Description
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
  • TBB1005EMTL-E - Rochester Electronics
    Rochester Electronics
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Description
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
- TBB1005EMTL-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
TBB1005EMTL-E
TBB1005EMTL-E
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Diodes
Product Number TBB1005EMTL-E
Life Cycle Stage Obsolete
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