Renesas Electronics Corporation 30V 3.3A MOSFET Transistor RQJ0303PGDQA#H6

MOSFET P-CH 30V 3.3A 3MPAK Product overview: RQJ0303PGDQA#H6 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQJ0303PGDQA#H6 can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092639-RQJ0303PGDQA#H6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MPAK
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.3A (Ta)
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 625pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 68 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

P-Channel 30V 3.3A (Ta) 800mW (Ta) Surface Mount 3-MPAK