Manufacturer: Renesas Electronics America
Win Source Part Number: 298711-RQA0002DNSTB-
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 2-HWSON (5x4)
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: 3-DFN Exposed Pad
Power Dissipation (Maximum): 15W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 16V
Id - Continuous Drain Current: 3.8A
Gate Source Voltage(th) (Maximum) at Id: 750mV at 1mA
Gate Source Voltage (Maximum): ±5V
RQA0002DNS - N CHANNEL MOSFET
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 298711-RQA0002DNSTB-E | RQA0002DNSTB-E |
| Product Name | FETs - Single - RQA0002DNSTB-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 16 volts | |
| PD | 15000 milliwatts |
