The RMLV0414EGSB-4S2#HA0 is a 4-Mbit static RAM organized as 262,144 words by 16 bits, designed using advanced LPSRAM technology. It operates on a single supply voltage ranging from 2.7V to 3.6V and features a maximum access time of 45ns. The device is characterized by low power consumption, with a typical standby current of 0.3µA, making it suitable for battery backup applications. It is packaged in a 44-pin TSOP (II) format and supports direct TTL compatibility for all inputs and outputs. The memory supports battery backup operation and has equal access and cycle times, enhancing its usability in various applications.
SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM Memory IC 4Mbit Parallel 45 ns 44-TSOP II
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | RMLV0414EGSB-4S2#HA0-ND | RMLV0414EGSB-4S2#HA0 | RMLV0414EGSB-4S2#HA0 | RMLV0414EGSB-4S2#HA0 |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits |
