Renesas Electronics Corporation Memory RMLV0414EGSB-4S2#HA0

Description
SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-TSOP II
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Description
SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The RMLV0414EGSB-4S2#HA0 is a 4-Mbit static RAM organized as 262,144 words by 16 bits, designed using advanced LPSRAM technology. It operates on a single supply voltage ranging from 2.7V to 3.6V and features a maximum access time of 45ns. The device is characterized by low power consumption, with a typical standby current of 0.3µA, making it suitable for battery backup applications. It is packaged in a 44-pin TSOP (II) format and supports direct TTL compatibility for all inputs and outputs. The memory supports battery backup operation and has equal access and cycle times, enhancing its usability in various applications.

Datasheet Summary
Powered by GS/AI

The RMLV0414EGSB-4S2#HA0 is a 4-Mbit static RAM organized as 262,144 words by 16 bits, designed using advanced LPSRAM technology. It operates on a single supply voltage ranging from 2.7V to 3.6V and features a maximum access time of 45ns. The device is characterized by low power consumption, with a typical standby current of 0.3µA, making it suitable for battery backup applications. It is packaged in a 44-pin TSOP (II) format and supports direct TTL compatibility for all inputs and outputs. The memory supports battery backup operation and has equal access and cycle times, enhancing its usability in various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - RMLV0414EGSB-4S2#HA0-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-TSOP II

SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - RMLV0414EGSB-4S2#HA0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
RMLV0414EGSB-4S2#HA0
Integrated Circuits (ICs) - Memory RMLV0414EGSB-4S2#HA0
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - RMLV0414EGSB-4S2#HA0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 4Mbit Parallel 45 ns 44-TSOP II

SRAM Memory IC 4Mbit Parallel 45 ns 44-TSOP II

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number RMLV0414EGSB-4S2#HA0-ND RMLV0414EGSB-4S2#HA0 RMLV0414EGSB-4S2#HA0 RMLV0414EGSB-4S2#HA0
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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