Renesas Electronics Corporation Memory RM3316-SNI-B

Description
IC EEPROM 256KBIT SPI 1MHZ 8SOIC
  • Memory - RM3316-SNI-B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC EEPROM 256KBIT SPI 1MHZ 8SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - RM3316-SNI-B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
RM3316-SNI-B
Memory RM3316-SNI-B
IC EEPROM 256KBIT SPI 1MHZ 8SOIC

IC EEPROM 256KBIT SPI 1MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number RM3316-SNI-B
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CAT24C03WI-G-CS - Lingto Electronic Limited
Rochester Electronics
Memory
CAT24C03WI-G-CS
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
SDRAM - 1882676 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882676
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - RAM - AS27C256-20JM - 1212176-AS27C256-20JM - Win Source Electronics
Micross Components, Inc.
Memory - RAM - AS27C256-20JM
AS27C256-20JM
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers
Memory IC and Storage Component - 505-10328_128MB_16Mx8_8C - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
10328_128MB_16Mx8_8C
View Details