IC CBRAM 256KBIT I2C 1MHZ 8SOIC Product overview: RM24C256C-LSNI-B from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-RM24C256C-LSNI-B
IC CBRAM 256KBIT I2C 1MHZ 8SOIC
EEPROM, 256KBIT, -40 TO 85DEG C; Memory Interface Type:Serial I2C (2-Wire); Memory Size:256Kbit; EEPROM Memory Configuration:512 x 64Byte; Clock Frequency:1MHz; Memory Case Style:WSOIC; No. of Pins:8Pins; Supply Voltage Min:1.65V RoHS Compliant: Yes
IC CBRAM 256KBIT I2C 1MHZ 8SOIC
| ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-RM24C256C-LSNI-B | RM24C256C-LSNI-B | 67AC4156 | RM24C256C-LSNI-B |
| Product Name | 1MHZ Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Eeprom, 256Kbit, -40 To 85Deg C; Memory Interface Type Renesas | Memory |
| Memory Category | Non-Volatile | Non-Volatile | EEPROM | CBRAM® |
| Cycle Time | 100000 to 5.00E6 ns | ? to 5.00E6 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | |||
| Package Type | SOIC; Tube | SOIC | WSOIC |
