Renesas Electronics Corporation Single FETs, MOSFETs RJL5012DPE-00#J3

Description
N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount LDPAK
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Description
N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount LDPAK
Request a Quote Datasheet

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Single FETs, MOSFETs - RJL5012DPE-00#J3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJL5012DPE-00#J3-ND
Single FETs, MOSFETs RJL5012DPE-00#J3-ND
N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount LDPAK

N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount LDPAK

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1224983-RJL5012DPE-00#J3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1224983-RJL5012DPE-00#J3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1224983-RJL5012DPE-00#J3
Win Source Part Number: 1224983-RJL5012DPE-0 0#J3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Power Dissipation (Max): 100W (Tc) Package / Case: SC-83 Supplier Device Package: LDPAK Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Base Product Number: RJL5012 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1224983-RJL5012DPE-00#J3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Package / Case: SC-83
Supplier Device Package: LDPAK
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Base Product Number: RJL5012
Drive Voltage (Max Rds On, Min Rds On): 10V

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MOSFET MOSFET

MOSFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJL5012DPE-00#J3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJL5012DPE-00#J3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJL5012DPE-00#J3
MOSFET N-CH 500V 12A 4LDPAK

MOSFET N-CH 500V 12A 4LDPAK

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RJL5012DPE-00#J3-ND 1224983-RJL5012DPE-00#J3 RJL5012DPE-00#J3 RJL5012DPE-00#J3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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