Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6032DPD-00#J2 RJK6032DPD-00#J2

The RJK6032DPD is an N-channel MOSFET designed for high-speed power switching, rated at 600 V drain-to-source voltage and 3 A continuous drain current. It is packaged in the MP-3A (SC-63) surface-mount case, weighing 0.32 g. The device has a typical on-resistance of 3.3 Ω at 1.5 A and 10 V gate drive, with a maximum channel dissipation of 40.3 W at 25 °C case temperature. The channel-to-case thermal impedance is 3.1 °C/W, and the maximum channel temperature is 150 °C. The gate-to-source voltage rating is ±30 V. The device features a body-drain diode with a reverse recovery time of 300 ns and a forward voltage of 0.9 to 1.5 V at 3 A. Total gate charge is 9.0 nC at 480 V drain voltage.