The RJK6026DPP-E0 is an N-channel MOSFET designed for high-speed power switching, featuring a 600 V drain-to-source voltage rating and a continuous drain current of 5 A. It is packaged in a TO-220FP case with dimensions compliant to the Renesas PRSS0003AG-A code, weighing approximately 1.9 g. The device has a typical on-resistance of 2.0 Ω at 2.5 A and 10 V gate-source voltage, with a maximum channel dissipation of 28.5 W at 25°C case temperature. It supports a peak drain current of 20 A under pulse conditions, has a total gate charge of 14 nC, and exhibits a channel-to-case thermal impedance of 4.38 °C/W. The operational temperature range is -55°C to +150°C. The part meets RoHS standards and is qualified for standard industrial applications but is not intended for life-critical systems. The ordering code suffix #T2 indicates tube packaging, consistent with the series specification.
Win Source Part Number: 1173391-RJK6026DPP-E
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28.5W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-RJK6026DPP-E0#T
Product Status: Obsolete
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1173391-RJK6026DPP-E0#T2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
