Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6026DPE-00#J3 RJK6026DPE-00#J3

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 793232-RJK6026DPE-00 #J3 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Family Name: RJK6026DPE-00 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 600V Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 62.5W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 793232-RJK6026DPE-00 #J3 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Family Name: RJK6026DPE-00 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 600V Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 62.5W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6026DPE-00#J3 - 793232-RJK6026DPE-00#J3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6026DPE-00#J3
793232-RJK6026DPE-00#J3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6026DPE-00#J3 793232-RJK6026DPE-00#J3
Manufacturer: Renesas Electronics America Win Source Part Number: 793232-RJK6026DPE-00 #J3 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Family Name: RJK6026DPE-00 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 600V Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 62.5W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 793232-RJK6026DPE-00#J3
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: SC-83
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Family Name: RJK6026DPE-00
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 4-LDPAK
Channel Type Type: N
Drain Source Voltage: 600V
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 62.5W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET MOSFET, 600V, LDPAK(S)-(1), Pb Free

MOSFET MOSFET, 600V, LDPAK(S)-(1), Pb Free

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK6026DPE-00#J3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK6026DPE-00#J3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK6026DPE-00#J3
MOSFET N-CH 600V 5A 4LDPAK

MOSFET N-CH 600V 5A 4LDPAK

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 793232-RJK6026DPE-00#J3 RJK6026DPE-00#J3 RJK6026DPE-00#J3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6026DPE-00#J3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 62500 milliwatts
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