Renesas Electronics Corporation MOSFET RJK6024DP3-A0#J2

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MOSFET MOSFET
Description
MOSFET MOSFET
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The RJK6024DP3-A0 is a 600 V, 0.4 A MOSFET in an SOT-223 package, designed for high-speed power switching applications. It features a typical on-resistance of 28 Ω at 0.2 A and 10 V gate-source voltage, with a maximum drain-source breakdown voltage of 600 V and a channel dissipation of 1.04 W at Tc = 25°C. The device has a thermal impedance of 120 °C/W and operates within a storage temperature range of -55°C to +150°C. It meets RoHS standards and is rated for pulse operation with a maximum drain current of 0.6 A under pulse conditions (PW ≤ 10 µs, duty cycle ≤ 1%).

Datasheet Summary
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The RJK6024DP3-A0 is a 600 V, 0.4 A MOSFET in an SOT-223 package, designed for high-speed power switching applications. It features a typical on-resistance of 28 Ω at 0.2 A and 10 V gate-source voltage, with a maximum drain-source breakdown voltage of 600 V and a channel dissipation of 1.04 W at Tc = 25°C. The device has a thermal impedance of 120 °C/W and operates within a storage temperature range of -55°C to +150°C. It meets RoHS standards and is rated for pulse operation with a maximum drain current of 0.6 A under pulse conditions (PW ≤ 10 µs, duty cycle ≤ 1%).

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK6024DP3-A0#J2
Product Name MOSFET
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