Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPK RJK6014DPK

Manufacturer: Renesas Electronics America
Win Source Part Number: 062543-RJK6014DPK
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Ta)
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 575 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

MOSFET N-CH 600V 11A TO220 Product overview: RJK6014DPK from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK6014DPK can be used for catalog matching and distributor lookup.