Manufacturer: Renesas Electronics America
Win Source Part Number: 1092316-RJK6012DPP-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Ta)
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 920 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
N-Channel 600V 10A (Ta) 30W (Tc) Through Hole TO-220FP
RJK6012DPP - N CHANNEL MOSFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1092316-RJK6012DPP-E0#T2 | RJK6012DPP-E0#T2-ND | RJK6012DPP-E0#T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6012DPP-E0#T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 600 volts | ||
| PD | 30000 milliwatts |
