Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK5018DPK-00-T0 RJK5018DPK-00-T0

Manufacturer: Renesas Electronics America
Win Source Part Number: 042323-RJK5018DPK-00-T0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 35A (Ta)
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 4100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 155 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

MOSFET N-CH 500V 35A TO3P Product overview: RJK5018DPK-00-T0 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 35A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK5018DPK-00-T0 can be used for catalog matching and distributor lookup.