Renesas Electronics Corporation Single FETs, MOSFETs RJK5013DPP-E0#T2

Description
N-Channel 500V 14A (Ta) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 500V 14A (Ta) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

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Company
Product
Description
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Single FETs, MOSFETs - RJK5013DPP-E0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK5013DPP-E0#T2-ND
Single FETs, MOSFETs RJK5013DPP-E0#T2-ND
N-Channel 500V 14A (Ta) 30W (Tc) Through Hole TO-220FP

N-Channel 500V 14A (Ta) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK5013DPP-E0#T2 - 1092305-RJK5013DPP-E0#T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK5013DPP-E0#T2
1092305-RJK5013DPP-E0#T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK5013DPP-E0#T2 1092305-RJK5013DPP-E0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 1092305-RJK5013DPP-E 0#T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 14A (Ta) Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 465 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092305-RJK5013DPP-E0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 14A (Ta)
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 465 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK5013DPP-E0#T2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK5013DPP-E0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK5013DPP-E0#T2
RJK5013DPP-E0#T2 - SILICON N CHA

RJK5013DPP-E0#T2 - SILICON N CHA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RJK5013DPP-E0#T2-ND 1092305-RJK5013DPP-E0#T2 RJK5013DPP-E0#T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK5013DPP-E0#T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP 10V
V(BR)DSS 500 volts
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