MOSFET N-CH 400V 7.6A TO220FL Product overview: RJK4007DPP-M0#T2 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 7.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK4007DPP-M0#T2
Manufacturer: Renesas Electronics America
Win Source Part Number: 1092302-RJK4007DPP-M
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FL
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 7.6A (Ta)
Max Gate Charge: 24.5nC @ 10V
Max Input Capacitance: 850pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET N-CH 400V 7.6A TO220FL
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RJK4007DPP-M0#T2 | 1092302-RJK4007DPP-M0#T2 | RJK4007DPP-M0#T2 | RJK4007DPP-M0#T2 |
| Product Name | 400V 7.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK4007DPP-M0#T2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 32000 milliwatts | 32000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | ||
| Package Type | Tube | TO-220; SOT3; TO-220FL | TO-220; TO-220-3 Full Pack |
