Renesas Electronics Corporation Single FETs, MOSFETs RJK2508DPK-00#T0

Description
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RJK2508DPK-00#T0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK2508DPK-00#T0-ND
Single FETs, MOSFETs RJK2508DPK-00#T0-ND
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P

N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 - 793226-RJK2508DPK-00#T0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0
793226-RJK2508DPK-00#T0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 793226-RJK2508DPK-00#T0
Manufacturer: Renesas Electronics America Win Source Part Number: 793226-RJK2508DPK-00 #T0 Packaging: Tube Mounting Style: Through Hole Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Family Name: RJK2508DPK Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 250V Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): 2SK2995(MDNSI1,F); ; 2SK2995(SAS,F); 2SK2967(PAIRDSL)2SK2 967(PAIRMDNSI); ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 793226-RJK2508DPK-00#T0
Packaging: Tube
Mounting Style: Through Hole
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Family Name: RJK2508DPK
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 250V
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2600pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): 2SK2995(MDNSI1,F); ; 2SK2995(SAS,F); 2SK2967(PAIRDSL)2SK2967(PAIRMDNSI);
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK2508DPK-00#T0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK2508DPK-00#T0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK2508DPK-00#T0
MOSFET N-CH 250V 50A TO3P

MOSFET N-CH 250V 50A TO3P

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK2508DPK-00#T0-ND 793226-RJK2508DPK-00#T0 RJK2508DPK-00#T0 RJK2508DPK-00#T0
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Unlock Full Specs
to access all available technical data