Renesas Electronics Corporation Single FETs, MOSFETs RJK2508DPK-00#T0

Description
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P
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Description
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - RJK2508DPK-00#T0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK2508DPK-00#T0-ND
Single FETs, MOSFETs RJK2508DPK-00#T0-ND
N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P

N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 - 793226-RJK2508DPK-00#T0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0
793226-RJK2508DPK-00#T0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 793226-RJK2508DPK-00#T0
Manufacturer: Renesas Electronics America Win Source Part Number: 793226-RJK2508DPK-00 #T0 Packaging: Tube Mounting Style: Through Hole Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Family Name: RJK2508DPK Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 250V Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): 2SK2995(MDNSI1,F); ; 2SK2995(SAS,F); 2SK2967(PAIRDSL)2SK2 967(PAIRMDNSI); ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 793226-RJK2508DPK-00#T0
Packaging: Tube
Mounting Style: Through Hole
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Family Name: RJK2508DPK
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 250V
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2600pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): 2SK2995(MDNSI1,F); ; 2SK2995(SAS,F); 2SK2967(PAIRDSL)2SK2967(PAIRMDNSI);
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

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MOSFET MOSFET

MOSFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK2508DPK-00#T0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK2508DPK-00#T0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK2508DPK-00#T0
MOSFET N-CH 250V 50A TO3P

MOSFET N-CH 250V 50A TO3P

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RJK2508DPK-00#T0-ND 793226-RJK2508DPK-00#T0 RJK2508DPK-00#T0 RJK2508DPK-00#T0
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2508DPK-00#T0 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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