Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0853DPB-00-J5 RJK0853DPB-00-J5

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 183111-RJK0853DPB-00 -J5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Family Name: RJK0853DPB Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 6170pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): PSMN011-80YS; PSMN011-80YS,115; PSMN8R2-80YS; BUK7Y9R9-80E; Introduction Date: July 27, 2010 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 183111-RJK0853DPB-00 -J5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Family Name: RJK0853DPB Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 6170pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): PSMN011-80YS; PSMN011-80YS,115; PSMN8R2-80YS; BUK7Y9R9-80E; Introduction Date: July 27, 2010 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0853DPB-00-J5 - 183111-RJK0853DPB-00-J5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0853DPB-00-J5
183111-RJK0853DPB-00-J5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0853DPB-00-J5 183111-RJK0853DPB-00-J5
Manufacturer: Renesas Electronics America Win Source Part Number: 183111-RJK0853DPB-00 -J5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Family Name: RJK0853DPB Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 6170pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): PSMN011-80YS; PSMN011-80YS,115; PSMN8R2-80YS; BUK7Y9R9-80E; Introduction Date: July 27, 2010 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 183111-RJK0853DPB-00-J5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Family Name: RJK0853DPB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 40A (Ta)
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 6170pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): PSMN011-80YS; PSMN011-80YS,115; PSMN8R2-80YS; BUK7Y9R9-80E;
Introduction Date: July 27, 2010
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
80V 40A MOSFET Transistor
285-RJK0853DPB-00-J5
80V 40A MOSFET Transistor 285-RJK0853DPB-00-J5
Trans MOSFET N-CH Si 80V 40A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 80V 40A LFPAK Product overview: RJK0853DPB-00-J5 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 40A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK0853DPB-00-J5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH Si 80V 40A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 80V 40A LFPAK Product overview: RJK0853DPB-00-J5 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 40A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK0853DPB-00-J5 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 183111-RJK0853DPB-00-J5 285-RJK0853DPB-00-J5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0853DPB-00-J5 80V 40A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts
PD 65000 milliwatts 65000 milliwatts
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