Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0602DPN-E0#T2 RJK0602DPN-E0#T2

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092283-RJK0602DPN-E0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 110A (Ta)
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 6450pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

N-Channel 60V 110A (Ta) 150W (Tc) Through Hole TO-220AB

MOSFET N-CH 60V 110A TO220AB Product overview: RJK0602DPN-E0#T2 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK0602DPN-E0#T2 can be used for catalog matching and distributor lookup.