Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0332DPB-01 RJK0332DPB-01

Manufacturer: Renesas Electronics America
Win Source Part Number: 295186-RJK0332DPB-01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 2180pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 17.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

MOSFET N-CH 30V 35A LFPAK Product overview: RJK0332DPB-01 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 35A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK0332DPB-01 can be used for catalog matching and distributor lookup.