Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0301DPB-02#J0 RJK0301DPB-02#J0

Manufacturer: Renesas Electronics America
Win Source Part Number: 131052-RJK0301DPB-02#J0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 5-LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Ta)
Max Gate Charge: 32nC @ 4.5V
Max Input Capacitance: 5000pF @ 10V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

N-Channel 30V 60A (Ta) 65W (Tc) Surface Mount LFPAK

MOSFET N-CH 30V 60A 5LFPAK Product overview: RJK0301DPB-02#J0 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK0301DPB-02#J0 can be used for catalog matching and distributor lookup.