Renesas Electronics Corporation Gate Drivers R2J20652ANP#G3

The R2J20652ANP#G3 is a multi-chip module that integrates a high-side MOS FET, low-side MOS FET, and a MOS-FET driver within a compact QFN package measuring 6 mm vó 6 mm vó 0.95 mm. This device is designed for high-current buck converter applications, making it suitable for use in notebooks, desktops, and servers. It features a built-in driver that optimizes the on and off timing of the power MOS FETs, enhancing performance. Key specifications include a maximum VIN operating voltage of 27 V and the capability to handle a large average output current of up to 35 A. The device supports high-frequency operation above 1 MHz and incorporates a low-side MOS FET with a built-in Schottky barrier diode (SBD) to minimize losses and reduce ringing. Additionally, it includes a tri-state input function compatible with various PWM controllers, a remote on/off control feature, and a low-side MOS FET disable function for discontinuous conduction mode (DCM) operation. The built-in bootstrap switch eliminates the need for an external SBD, further simplifying the design. The product is also Pb-free and halogen-free, aligning with environmental standards.