Renesas Electronics Corporation Memory R1RW0416DSB-2PR#D0

Description
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44
  • R1RW0416DSB-2PR#D0 - Rochester Electronics
    Rochester Electronics
  • Memory - R1RW0416DSB-2PR#D0 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- R1RW0416DSB-2PR#D0 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
R1RW0416DSB-2PR#D0
R1RW0416DSB-2PR#D0
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

Supplier's Site Datasheet
Memory - R1RW0416DSB-2PR#D0 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
R1RW0416DSB-2PR#D0
Memory R1RW0416DSB-2PR#D0
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number R1RW0416DSB-2PR#D0 R1RW0416DSB-2PR#D0
Product Name Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14B101L-SP35XI-ND - DigiKey
Infineon Technologies AG
Memory
CY14B101L-SP35XI
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 6116SA90TDB - Lingto Electronic Limited
Rochester Electronics
Memory
6116SA90TDB
Specs
Memory Category SRAM; SRAM Chip
Access Time 90 ns
Density 16 kbits
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details