Manufacturer: Renesas Electronics America
Win Source Part Number: 287819-R1RW0416DGE-2
Packaging: Tube
Mounting Style: SMD
Technology: SRAM
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 12ns
Categories: Integrated Circuits
Supplier Device Package: 44-SOJ
Status: Obsolete
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 44-BSOJ
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 18
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
IC SRAM 4MBIT PARALLEL 44SOJ Product overview: R1RW0416DGE-2PR#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1RW0416DGE-2PR#
SRAM Memory IC 4Mb (256K x 16) Parallel 12ns 44-SOJ
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IC SRAM 4MBIT PARALLEL 44SOJ
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 287819-R1RW0416DGE-2PR#B0 | 774-R1RW0416DGE-2PR#B0 | R1RW0416DGE-2PR#B0-ND | R1RW0416DGE-2PR#B0 | R1RW0416DGE-2PR#B0 | R1RW0416DGE-2PR#B0 |
| Product Name | Memory - SRAM - R1RW0416DGE-2PR#B0 | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 12 ns | 12 ns | 12 ns | 12 ns | 12 ns | |
| Cycle Time | 12 ns | 12 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
