Renesas Electronics Corporation Memory R1Q4A3618CBB-33IA0

Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)
Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

Suppliers

Company
Product
Description
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Memory - R1Q4A3618CBB-33IA0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1Q4A3618CBB-33IA0
Integrated Circuits (ICs) - Memory - Memory R1Q4A3618CBB-33IA0
IC SRAM 36MBIT PARALLEL 165LBGA

IC SRAM 36MBIT PARALLEL 165LBGA

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number R1Q4A3618CBB-33IA0 R1Q4A3618CBB-33IA0
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 0.4500 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 36000 kbits 36000 kbits
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