Renesas Electronics Corporation Memory R1Q4A3618CBB-33IA0

Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)
Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

Suppliers

Company
Product
Description
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Memory - R1Q4A3618CBB-33IA0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 450 ps 165-LBGA (13x15)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1Q4A3618CBB-33IA0
Integrated Circuits (ICs) - Memory - Memory R1Q4A3618CBB-33IA0
IC SRAM 36MBIT PARALLEL 165LBGA

IC SRAM 36MBIT PARALLEL 165LBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number R1Q4A3618CBB-33IA0 R1Q4A3618CBB-33IA0
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 0.4500 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 36000 kbits 36000 kbits
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