Renesas Electronics Corporation Memory - SRAM - R1LV0108ESF-5SI#S0 R1LV0108ESF-5SI#S0

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 792853-R1LV0108ESF-5 SI#S0 Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 32-TFSOP (0.724", 18.40mm Width) Mounting: SMD Technology: SRAM Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 55ns Part Status: Obsolete(EOL) Family Name: R1LV0108E Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Manufacturer Package: 32-TSOP (8x20) Alternative Parts (Cross-Reference): EM610FV8T-55LF; EM610FV8T-55LL; CY62128VLL-70ZIT; CY62128VL-70ZI; Introduction Date: January 28, 2011 ECCN: 3A991 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 792853-R1LV0108ESF-5 SI#S0 Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 32-TFSOP (0.724", 18.40mm Width) Mounting: SMD Technology: SRAM Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 55ns Part Status: Obsolete(EOL) Family Name: R1LV0108E Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Manufacturer Package: 32-TSOP (8x20) Alternative Parts (Cross-Reference): EM610FV8T-55LF; EM610FV8T-55LL; CY62128VLL-70ZIT; CY62128VL-70ZI; Introduction Date: January 28, 2011 ECCN: 3A991 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - R1LV0108ESF-5SI#S0 - 792853-R1LV0108ESF-5SI#S0 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - R1LV0108ESF-5SI#S0
792853-R1LV0108ESF-5SI#S0
Memory - SRAM - R1LV0108ESF-5SI#S0 792853-R1LV0108ESF-5SI#S0
Manufacturer: Renesas Electronics America Win Source Part Number: 792853-R1LV0108ESF-5 SI#S0 Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 32-TFSOP (0.724", 18.40mm Width) Mounting: SMD Technology: SRAM Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 55ns Part Status: Obsolete(EOL) Family Name: R1LV0108E Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Manufacturer Package: 32-TSOP (8x20) Alternative Parts (Cross-Reference): EM610FV8T-55LF; EM610FV8T-55LL; CY62128VLL-70ZIT; CY62128VL-70ZI; Introduction Date: January 28, 2011 ECCN: 3A991 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 792853-R1LV0108ESF-5SI#S0
Packaging: Reel package
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 32-TFSOP (0.724", 18.40mm Width)
Mounting: SMD
Technology: SRAM
Operating Supply Voltage: 2.7 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 55ns
Part Status: Obsolete(EOL)
Family Name: R1LV0108E
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Manufacturer Package: 32-TSOP (8x20)
Alternative Parts (Cross-Reference): EM610FV8T-55LF; EM610FV8T-55LL; CY62128VLL-70ZIT; CY62128VL-70ZI;
Introduction Date: January 28, 2011
ECCN: 3A991
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-R1LV0108ESF-5SI#S0 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-R1LV0108ESF-5SI#S0
Memory IC and Storage Component 774-R1LV0108ESF-5SI#S0
IC SRAM 1MBIT PARALLEL 32TSOP I Product overview: R1LV0108ESF-5SI#S0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESF-5SI# S0 can be used for catalog matching and distributor lookup.

IC SRAM 1MBIT PARALLEL 32TSOP I Product overview: R1LV0108ESF-5SI#S0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESF-5SI#S0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - R1LV0108ESF-5SI#S0-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TSOP I

SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TSOP I

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - R1LV0108ESF-5SI#S0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1LV0108ESF-5SI#S0
Integrated Circuits (ICs) - Memory - Memory R1LV0108ESF-5SI#S0
IC SRAM 1MBIT PARALLEL 32TSOP I

IC SRAM 1MBIT PARALLEL 32TSOP I

Supplier's Site
Memory - R1LV0108ESF-5SI#S0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 1Mbit Parallel 55 ns 32-TSOP I

SRAM Memory IC 1Mbit Parallel 55 ns 32-TSOP I

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 32TSOP

IC SRAM 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 792853-R1LV0108ESF-5SI#S0 774-R1LV0108ESF-5SI#S0 R1LV0108ESF-5SI#S0-ND R1LV0108ESF-5SI#S0 R1LV0108ESF-5SI#S0 R1LV0108ESF-5SI#S0
Product Name Memory - SRAM - R1LV0108ESF-5SI#S0 Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; SRAM Chip Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 55 ns 55 ns 55 ns 55 ns
Cycle Time 55 ns 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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