Renesas Electronics Corporation Memory R1EV58256BTCNBI#B2

Description
EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I
Datasheet
Description
EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1EV58256BTCNBI#B2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I

EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I

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Integrated Circuits (ICs) - Memory - R1EV58256BTCNBI#B2 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV58256BTCNBI#B2
Integrated Circuits (ICs) - Memory R1EV58256BTCNBI#B2
IC EEPROM 256KB CMOS PTSA0028ZB

IC EEPROM 256KB CMOS PTSA0028ZB

Supplier's Site
IC EEPROM 256KB CMOS PTSA0028ZB

IC EEPROM 256KB CMOS PTSA0028ZB

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number R1EV58256BTCNBI#B2 R1EV58256BTCNBI#B2 R1EV58256BTCNBI#B2
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 85 ns 85 ns 85 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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5 suppliers