Renesas Electronics Corporation Memory R1EV58256BTCNBI#B2

Description
IC EEPROM 256KB CMOS PTSA0028ZB
Datasheet
Description
IC EEPROM 256KB CMOS PTSA0028ZB
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 256KB CMOS PTSA0028ZB

IC EEPROM 256KB CMOS PTSA0028ZB

Supplier's Site Datasheet
Memory - R1EV58256BTCNBI#B2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I

EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - R1EV58256BTCNBI#B2 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV58256BTCNBI#B2
Integrated Circuits (ICs) - Memory R1EV58256BTCNBI#B2
IC EEPROM 256KB CMOS PTSA0028ZB

IC EEPROM 256KB CMOS PTSA0028ZB

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number R1EV58256BTCNBI#B2 R1EV58256BTCNBI#B2 R1EV58256BTCNBI#B2
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 85 ns 85 ns 85 ns
Density 256 kbits 256 kbits 256 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S23AJC - Lingto Electronic Limited
Rochester Electronics
View Details
3 suppliers
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details