Renesas Electronics Corporation Memory R1EV58064BTCNBI#B2

Description
EEPROM Memory IC 64Kbit Parallel 100 ns 28-TSOP I
Datasheet
Description
EEPROM Memory IC 64Kbit Parallel 100 ns 28-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1EV58064BTCNBI#B2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 100 ns 28-TSOP I

EEPROM Memory IC 64Kbit Parallel 100 ns 28-TSOP I

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - R1EV58064BTCNBI#B2 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV58064BTCNBI#B2
Integrated Circuits (ICs) - Memory R1EV58064BTCNBI#B2
IC EEPROM 64KB CMOS 28TSOP

IC EEPROM 64KB CMOS 28TSOP

Supplier's Site
IC EEPROM 64KB CMOS 28TSOP

IC EEPROM 64KB CMOS 28TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number R1EV58064BTCNBI#B2 R1EV58064BTCNBI#B2 R1EV58064BTCNBI#B2
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 100 ns 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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