Renesas Electronics Corporation Memory R1EV58064BDARBI#B2

Description
EEPROM Memory IC 64Kbit Parallel 100 ns 28-DIP
Datasheet
Description
EEPROM Memory IC 64Kbit Parallel 100 ns 28-DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1EV58064BDARBI#B2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 100 ns 28-DIP

EEPROM Memory IC 64Kbit Parallel 100 ns 28-DIP

Buy Now Datasheet
IC EEPROM 64KB C-MOS 28DIP

IC EEPROM 64KB C-MOS 28DIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - R1EV58064BDARBI#B2 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV58064BDARBI#B2
Integrated Circuits (ICs) - Memory R1EV58064BDARBI#B2
IC EEPROM 64KB C-MOS 28DIP

IC EEPROM 64KB C-MOS 28DIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number R1EV58064BDARBI#B2 R1EV58064BDARBI#B2 R1EV58064BDARBI#B2
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 100 ns 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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