Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY NP90N04VUK-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY - 1083366-NP90N04VUK-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY
1083366-NP90N04VUK-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY 1083366-NP90N04VUK-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083366-NP90N04VUK-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 5850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYDKR-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYDKR-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYTR-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYTR-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYCT-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYCT-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP90N04VUK-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP90N04VUK-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP90N04VUK-E1-AY
MOSFET N-CH 40V 90A TO252

MOSFET N-CH 40V 90A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083366-NP90N04VUK-E1-AY 559-NP90N04VUK-E1-AYDKR-ND NP90N04VUK-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 1200 to 147000 milliwatts
TJ 175 C (347 F)
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