Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY NP90N04VUK-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY - 1083366-NP90N04VUK-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY
1083366-NP90N04VUK-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY 1083366-NP90N04VUK-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083366-NP90N04VUK-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083366-NP90N04VUK-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 5850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Singapore
40V 90A TO252 MOSFET Transistor
278-NP90N04VUK-E1-AY
40V 90A TO252 MOSFET Transistor 278-NP90N04VUK-E1-AY
MOSFET N-CH 40V 90A TO252 Product overview: NP90N04VUK-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP90N04VUK-E1-AY can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 90A TO252 Product overview: NP90N04VUK-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP90N04VUK-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYDKR-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYDKR-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYTR-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYTR-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP90N04VUK-E1-AYCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP90N04VUK-E1-AYCT-ND
Single FETs, MOSFETs 559-NP90N04VUK-E1-AYCT-ND
N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

N-Channel 40V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP90N04VUK-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP90N04VUK-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP90N04VUK-E1-AY
MOSFET N-CH 40V 90A TO252

MOSFET N-CH 40V 90A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083366-NP90N04VUK-E1-AY 278-NP90N04VUK-E1-AY 559-NP90N04VUK-E1-AYDKR-ND NP90N04VUK-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N04VUK-E1-AY 40V 90A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 1200 to 147000 milliwatts 147 milliwatts
TJ 175 C (347 F) 175 C (347 F)
Package Type TO-220; SOT3; TO-252 (DPAK); TO-252 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Surface Mount
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