Renesas Electronics Corporation Single FETs, MOSFETs NP83P06PDG-E1-AY

P-Channel 60V 83A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263

P-Channel 60V 83A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263

P-Channel 60V 83A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263

MOSFET P-CH 60V 83A TO263 Product overview: NP83P06PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 83A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 83A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP83P06PDG-E1-AY can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 126333-NP83P06PDG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 83A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 10100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 41.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited