Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N04PDG-E1-AY NP82N04PDG-E1-AY

Manufacturer: Renesas Electronics America
Win Source Part Number: 258937-NP82N04PDG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 82A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 9000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 41A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

N-Channel 40V 82A (Tc) 1.8W (Ta), 143W (Tc) Surface Mount TO-263

MOSFET N-CH 40V 82A TO263 Product overview: NP82N04PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 82A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP82N04PDG-E1-AY can be used for catalog matching and distributor lookup.