Renesas Electronics Corporation Single FETs, MOSFETs NP80N06PLG-E1B-AY

Description
N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263
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Description
N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263
Request a Quote Datasheet

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Single FETs, MOSFETs - NP80N06PLG-E1B-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP80N06PLG-E1B-AYTR-ND
Single FETs, MOSFETs NP80N06PLG-E1B-AYTR-ND
N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263

N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N06PLG-E1B-AY - 1083352-NP80N06PLG-E1B-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N06PLG-E1B-AY
1083352-NP80N06PLG-E1B-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N06PLG-E1B-AY 1083352-NP80N06PLG-E1B-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083352-NP80N06PLG-E 1B-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 128nC @ 10V Max Input Capacitance: 6900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083352-NP80N06PLG-E1B-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 128nC @ 10V
Max Input Capacitance: 6900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.3 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP80N06PLG-E1B-AY - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP80N06PLG-E1B-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP80N06PLG-E1B-AY
MOSFET N-CH 60V 80A TO263

MOSFET N-CH 60V 80A TO263

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NP80N06PLG-E1B-AYTR-ND 1083352-NP80N06PLG-E1B-AY NP80N06PLG-E1B-AY
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N06PLG-E1B-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
V(BR)DSS 60 volts
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