Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP60N055MUK-S18-AY NP60N055MUK-S18-AY

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083343-NP60N055MUK-S18-AY
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 1

MOSFET N-CH 55V 60A TO-220 Product overview: NP60N055MUK-S18-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 60A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 60A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP60N055MUK-S18-AY can be used for catalog matching and distributor lookup.