MOSFET N-CH 40V 60A TO263
Manufacturer: Renesas Electronics America
Win Source Part Number: 1083338-NP60N04KUG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.1 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 40V 60A (Tc) 1.8W (Ta), 88W (Tc) Surface Mount TO-263
MOSFET N-CH 40V 60A TO263
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | NP60N04KUG-E1-AY | 1083338-NP60N04KUG-E1-AY | NP60N04KUG-E1-AY-ND | NP60N04KUG-E1-AY |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP60N04KUG-E1-AY | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 40 volts | 40 volts | ||
| IDSS | 60000 milliamps |
